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參數(shù)資料
| 型號(hào)： | IRLI630 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | ADVANCED POWER MOSFET |
| 中文描述： | 先進(jìn)的功率MOSFET |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | IRLI630 |
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Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
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supplementary data will be published at a later date.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLI630A | ADVANCED POWER MOSFET |
| IRLWI630A | Advanced Power MOSFET |
| IRLW630A | ADVANCED POWER MOSFET |
| IRLM110A | H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0; |
| IRLM120A | Advanced Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLI630A | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
| IRLI630ATU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLI630G | 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLI630GPBF | 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLI640 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A) |
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