參數(shù)資料
型號： IRLI630A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： ADVANCED POWER MOSFET
中文描述： 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： I2PAK-3
文件頁數(shù)： 1/7頁
文件大?。?/td> 225K
代理商： IRLI630A
IRLW/I630A
BV
DSS
= 200 V
R
DS(on)
= 0.4
I
D
= 9 A
200
9
5.7
32
±
20
54
9
6.9
5
3.1
69
0.55
- 55 to +150
300
1.81
40
62.5
--
--
--
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150
°
C Operating Temperature
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 200V
Lower R
DS(ON)
: 0.335
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
1999 Fairchild Semiconductor Corporation
Rev. B
相關PDF資料
PDF描述
IRLWI630A Advanced Power MOSFET
IRLW630A ADVANCED POWER MOSFET
IRLM110A H-Bridge and Half Bridge Driver IC; Package: PG-DSO-20; Operating Range: 7.5 - 60.0 V; I<sub>Q </sub>: 0.6 mA; turn on/off current: 0.85/ 0.85 A; D.C.-range: 0...96/ 100%; numbers of integrated OPAMPs for load current measurement: 0.0;
IRLM120A Advanced Power MOSFET
IRLM210 Advanced Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRLI630ATU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI630G 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI630GPBF 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI640 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.9A)
IRLI640A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-262AA
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