參數(shù)資料
型號： IRLI620A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： ADVANCED POWER MOSFET
中文描述： 3.3 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝： I2PAK-3
文件頁數(shù)： 1/7頁
文件大?。?/td> 222K
代理商： IRLI620A
IRLW/I620A
BV
DSS
= 200 V
R
DS(on)
= 0.8
I
D
= 5 A
200
3.3
2.1
12
±
20
29
3.3
3.3
5
3.1
33
0.26
- 55 to +150
300
3.81
40
62.5
--
--
--
1
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150
°
C Operating Temperature
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 200V
Lower R
DS(ON)
: 0.609
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
1999 Fairchild Semiconductor Corporation
Rev. B
相關PDF資料
PDF描述
IRLWI620A Advanced Power MOSFET
IRLW620A ADVANCED POWER MOSFET
IRLM220A Advanced Power MOSFET
IRLR110A ADVANCED POWER MOSFET
IRLRU110A Advanced Power MOSFET
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