參數(shù)資料
型號: IRLM220A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Advanced Power MOSFET
中文描述: 1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-223, 4 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 243K
代理商: IRLM220A
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25
°
C)
Continuous Drain Current (T
A
=70
°
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
IRLM220A
BV
DSS
= 200 V
R
DS(on)
= 0.8
I
D
= 1.13 A
200
1.13
0.9
9
±
20
29
1.13
0.2
5
2
0.016
- 55 to +150
300
62.5
--
(1)
(2)
(1)
(1)
(3)
ν
Avalanche Rugged Technology
ν
Rugged Gate Oxide Technology
ν
Lower Input Capacitance
ν
Improved Gate Charge
ν
Extended Safe Operating Area
ν
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= 200V
ν
Lower R
DS(ON)
: 0.609
(Typ.)
Advanced Power MOSFET
FEATURES
SOT-223
1. Gate 2. Drain 3. Source
2
1
3
*
When mounted on the minimum pad size recommended (PCB Mount).
Thermal Resistance
Junction-to-Ambient
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
*
Absolute Maximum Ratings
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
°
C
A
°
C
*
P
D
*
Rev. A
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