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參數(shù)資料
| 型號： | IRLI3705G |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 45A I(D) | TO-220VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 50V五（巴西）直| 45A條（?。﹟對220VAR |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IRLI3705G |
IRLI3103
HEXFET
Power MOSFET
PRELIMINARY
PD 9.1377
V
DSS
= 30V
R
DS(on)
= 0.014
I
D
= 38A
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Description
Parameter
Typ.
–––
–––
Max.
4.0
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
Parameter
Max.
38
27
220
38
0.25
± 20
240
34
3.8
2.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLI3103 | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| IRLI520G | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.2A I(D) | SOT-186 |
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| IRLI540G | |
| IRLI540N | 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLI3705N | 制造商:International Rectifier 功能描述:MOSFET N LOGIC FULLPAK |
| IRLI3705NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 52A 3-Pin(3+Tab) TO-220FP |
| IRLI3705NPBF | 功能描述:MOSFET MOSFT 55V 47A 10mOhm 65.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLI3803 | 功能描述:MOSFET N-CH 30V 76A TO220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLI3803PBF | 功能描述:MOSFET MOSFT 30V 67A 6mOhm 93.3nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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