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參數(shù)資料
| 型號(hào)： | IRLI3103 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IRLI3103 |
IRLI3103
HEXFET
Power MOSFET
PRELIMINARY
PD 9.1377
V
DSS
= 30V
R
DS(on)
= 0.014
I
D
= 38A
Logic-Level Gate Drive
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Description
Parameter
Typ.
–––
–––
Max.
4.0
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
Parameter
Max.
38
27
220
38
0.25
± 20
240
34
3.8
2.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLI520G | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7.2A I(D) | SOT-186 |
| IRLI530G | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.7A I(D) | SOT-186 |
| IRLI540G | |
| IRLI540N | 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
| IRLI640A | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-262AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLI3215PBF | 制造商:International Rectifier 功能描述: |
| IRLI3303 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLI3615 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLI3615HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 14A 3-Pin(3+Tab) TO-220 |
| IRLI3615PBF | 制造商:International Rectifier 功能描述:MOSFET N 150V 14A TO-220FP |
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