參數(shù)資料
型號： IRLBA1304P
英文描述： 40V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
中文描述： 單40V的N溝道HEXFET功率MOSFET的在超級220（到273AA）封裝
文件頁數(shù)： 1/8頁
文件大?。?/td> 95K
代理商： IRLBA1304P
IRLBA1304/P
HEXFET
Power MOSFET
The HEXFET
is the
most popular power MOSFET in the world.
This particular HEXFET
is in the Super220
TM
and has
the same outline and
pinout as the industry standard TO-220. It has increased current handling
capability over both the TO-220 and the much larger TO-247 package. This
makes it ideal to reduce component count in multiparalled TO-220 applications,
reduce system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline.
This package has also been designed to meet
automotive qualification standard Q101.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
300 (1.6mm from case )
20
°C
N
Parameter
Typ.
–––
0.5
–––
Max.
0.5
–––
58
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.004
I
D
= 185A
l
Logic-Level Gate Drive
l
Ultra Low On-Resistance
l
Same outline as TO-220
l
50% greater current in typ.
application conditions vs. TO-220
l
Fully Avalanche Rated
Description
6/1/99
www.irf.com
1
Super
_
220
* Current capability in normal application, see Fig.9.
PD- 91842
相關(guān)PDF資料
PDF描述
IRLBA1304P HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管)
IRLBL1304 TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 95A I(D) | TO-263AA
IRLC1304 TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | CHIP
IRLC9024N TRANSISTOR | MOSFET | P-CHANNEL | 55V V(BR)DSS | CHIP
IRLF110 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3.5A I(D) | TO-205AF
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLBA1304PPBF 功能描述:MOSFET N-CH 40V 185A SUPER-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLBA3803 功能描述:MOSFET N-CH 30V 179A SUPER-220 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLBA3803/P 制造商:IRF 制造商全稱:International Rectifier 功能描述:30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
IRLBA3803P 功能描述:MOSFET N-CH 30V 179A SUPER-220 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRLBA3803PPBF 制造商:International Rectifier 功能描述:MOSFET, 30V, 179A, 5 MOHM, 93.3 NC QG, LOGIC LEVEL, TO-273AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 179A 3PIN TO-273AA - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N 30V 179A SUPER 220 制造商:International Rectifier 功能描述:MOSFET, N, 30V, 179A, SUPER 220 制造商:International Rectifier 功能描述:MOSFET, N, 30V, 179A, SUPER 220, Transistor Polarity:N Channel, Continuous Drain Current Id:179A, Drain Source Voltage Vds:30V, On Resistance Rds(on):5mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1V, Power Dissipation , RoHS Compliant: Yes 制造商:International Rectifier 功能描述:N CH MOSFET, 30V, 179A, SUPER-220, Transistor Polarity:N Channel, Continuous Dra
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