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參數(shù)資料
| 型號(hào)： | IRLBL1304 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 95A I(D) | TO-263AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 40V的五（巴西）直| 95A章一（d）|對(duì)263AA |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 215K |
| 代理商： | IRLBL1304 |
IRLBL1304
HEXFET
Power MOSFET
PD- 91843A
The HEXFET
MOSFET is the
most popular power MOSFET in the world.
This particular HEXFET
MOSFET is in the SuperD
2
Pak
TM
and has
the same
outline and pinout as the standard D
2
Pak but has increased current handling
capability and >1mm lower profile. This makes it ideal to reduce component
count in multiparallel D
2
Pak operation, reduce system power dissipation or
upgrade existing design.
This package has also been designed to meet automotive qualification
standard Q101 and can be used with normal surface mouting equipment
and has the same temperature profile and recommendations as the
commonly used D
2
Pak.
S
D
G
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
260 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
Max.
0.50
40
Units
W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
Thermal Resistance
l
>1mm lower profile than D
2
Pak
l
Same footprint as D
2
pak
l
Logic Level Gate
l
Surface mount
l
Ultra Low On-Resistance
l
Fully Avalanche Rated
l
50% greater current in typ. application
condition vs. D
2
Pak
Description
2/16/00
www.irf.com
1
V
DSS
= 40V
R
DS(on)
= 0.0045
I
D
= 185A
Super-D
2
Pak
TM
* Current capability in normal application, see Fig.9.
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