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參數(shù)資料
| 型號(hào)： | IRL7N1404 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET SURFACE MOUNT (SMD-1) |
| 中文描述： | HEXFET功率MOSFET的表面貼裝系統(tǒng)（SMD - 1） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | IRL7N1404 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temp.
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
55*
55*
220
100
0.8
±20
300
55
10
2.0
-55 to 150
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5s)
2.6 (Typical)
g
o
C
A
04/26/02
www.irf.com
1
Product Summary
Part Number
IRL7N1404
BVDSS
40V
R
DS(on)
0.006
I
D
55A*
For footnotes refer to the last page
HEXFET
POWER MOSFET
SURFACE MOUNT (SMD-1)
IRL7N1404
40V, N-CHANNEL
Seventh Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Features:
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Surface Mount
LogicGate Drive
SMD-1
* Current is limited by package
PD - 94348A
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