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參數(shù)資料
| 型號： | IRLBD59N04E |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 119K |
| 代理商： | IRLBD59N04E |
Parameter
Max.
59
41
230
130
0.89
± 10
320
35
13
2.2
± 50
± 2.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
V
GS
Clamp Current
Electrostatic Votage Rating
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
mA
kV
°C
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
I
G
V
ESD
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
IRLBD59N04E
HEXFET
Power MOSFET
The IRLBD59N04E is a 40V, N-channel HEXFET
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
Max.
1.12
40
Units
°C/W
R
θ
JC
R
θ
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.018
I
D
= 59A
l
Integrated Temperature Sensing Diode
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fully Avalanche Rated
l
Zener Gate Protected
Description
4/11/00
PD -93910
1
5 Lead-D
2
Pak
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