參數(shù)資料
型號(hào): IRL5Y7413CM
英文描述: 30V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
中文描述: 30V的單個(gè)N -溝道高可靠性MOSFET的采用TO - 257AA封裝
文件頁數(shù): 1/7頁
文件大?。?/td> 103K
代理商: IRL5Y7413CM
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
18*
18*
72
75
0.6
±16
230
18
7.5
2.7
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
o
C
A
08/07/01
www.irf.com
1
Product Summary
Part Number
IRL5Y7413CM
BVDSS
30V
R
DS(on)
0.025
18A*
I
D
For footnotes refer to the last page
TO-257AA
HEXFET
POWER MOSFET
THRU-HOLE (TO-257AA)
IRL5Y7413CM
30V, N-CHANNEL
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
* Current is limited by package
Features:
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
PD - 94164A
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