- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360968 > IRL5602STRR TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 24A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號(hào)： | IRL5602STRR |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 24A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| P通道| 20V的五（巴西）直| 24A條（?。﹟對(duì)263AB |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 242K |
| 代理商： | IRL5602STRR |
Parameter
Typ.
–––
–––
Max.
2.0
40
Units
R
q
JC
R
q
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
IRL5602S
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Parameter
Max.
-24
-17
-96
75
0.5
± 8.0
290
-12
7.5
-0.81
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= -20V
R
DS(on)
= 0.042
W
I
D
= -24A
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
P-Channel
l
Fast Switching
l
Fully Avalanche Rated
Description
5/11/99
1
S
D
G
D Pak
°C/W
PD- 91888
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRL5NJ7413 | 30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package |
| IRL5Y7413CM | 30V Single N-Channel Hi-Rel MOSFET in a TO-257AA package |
| IRL610S | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB |
| IRL611 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) | TO-220AB |
| IRL610S | 200V N-Channel Power MOSFET(漏源電壓為200V的N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRL5602STRRPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL-5-K-D-2 | 制造商:Lorlin 功能描述:KEYSWITCH DPDT DIFF KEY 制造商:Lorlin 功能描述:KEYSWITCH, DPDT, DIFF KEY 制造商:Lorlin 功能描述:KEYSWITCH, DPDT, DIFF KEY; Contact Configuration:DPDT; Switch Operation:Off-On; Angle of Throw:60; Actuator Style:Key; No. of Switch Positions:1; Contact Voltage AC Nom:115V; Contact Voltage DC Nom:24V; Contact Current Max:1A; ;RoHS Compliant: Yes |
| IRL-5-K-S-2 | 制造商:Lorlin 功能描述:KEYSWITCH DPDT SAME KEY 制造商:Lorlin 功能描述:KEYSWITCH, DPDT, SAME KEY 制造商:Lorlin 功能描述:KEYSWITCH, DPDT, SAME KEY; Contact Configuration:DPDT; Switch Operation:Off-On; Angle of Throw:60; Actuator Style:Key; No. of Switch Positions:2; Contact Voltage AC Nom:115V; Contact Voltage DC Nom:24V; Contact Current Max:1A; ;RoHS Compliant: Yes |
| IRL-5-K-S-2-813 | 制造商:Lorlin Electronics Ltd 功能描述: |
| IRL-5-K-S-2-850 | 制造商:Lorlin Electronics Ltd 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。