- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384506 > IRL520N (International Rectifier) HEXFET?? Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRL520N |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET?? Power MOSFET |
| 中文描述： | 的HEXFET？？功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 134K |
| 代理商： | IRL520N |
IRL520N
HEXFET
Power MOSFET
PD - 91494A
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.18
I
D
= 10A
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
TO-220AB
5/13/98
Parameter
Max.
10
7.1
35
48
0.32
± 16
85
6.0
4.8
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Parameter
Typ.
–––
0.50
–––
Max.
3.1
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRL5Y024CM | HEXFET POWER MOSFET THRU-HOLE (TO-257AA) |
| IRL7833 | HEXFETPower MOSFET |
| IRL7833L | HEXFETPower MOSFET |
| IRL7833S | HEXFETPower MOSFET |
| IRL7N1404 | HEXFET POWER MOSFET SURFACE MOUNT (SMD-1) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRL520NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 10A 3PIN TO-220AB - Rail/Tube |
| IRL520NL | 功能描述:MOSFET N-CH 100V 10A TO-262 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRL520NLPBF | 功能描述:MOSFET N-CH 100V 10A TO-262 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRL520NPBF | 功能描述:MOSFET MOSFT 10A 13.3nC 180mOhm LogLvAB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL520NPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。