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參數(shù)資料
| 型號： | IRHNA93160 |
| 英文描述： | -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package |
| 中文描述： | - 100V的300kRad高可靠性單P溝道工貿(mào)硬化的貼片MOSFET的- 2封裝 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 269K |
| 代理商： | IRHNA93160 |
www.irf.com
5
Pre-Irradiation
IRHE7230, JANSR2N7262U
Post-Irradiation
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
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