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參數(shù)資料
| 型號(hào)： | IRHF597130 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6.7 A, 100 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | TO-39, HERMETIC SEALED PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 203K |
| 代理商： | IRHF597130 |
IRHF597130
Pre-Irradiation
2
www.irf.com
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
-6.7
ISM
Pulse Source Current (Body Diode)
—
-26.8
VSD Diode Forward Voltage
—
-5.0
V
Tj = 25°C, IS = -6.7A, VGS = 0V
trr
Reverse Recovery Time
—
150
ns
Tj = 25°C, IF = -6.7A, di/dt ≤ -100A/s
QRR Reverse Recovery Charge
—
408
nC
VDD ≤ -50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-100
—
V
VGS = 0V, ID = -1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown —
-0.13
—
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.24
VGS = -12V, ID = -4.3A
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
—
-4.0
V
VDS = VGS, ID = -1.0mA
gfs
Forward Transconductance
4.3
—
S ( )
VDS = -15V, IDS = -4.3A
IDSS
Zero Gate Voltage Drain Current
—
-10
VDS = -80V ,VGS = 0V
—
-25
VDS = -80V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
—
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
—
100
VGS = 20V
Qg
Total Gate Charge
—
40
VGS =-12V, ID = -6.7A
Qgs
Gate-to-Source Charge
—
16
nC
VDS = -50V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
11
td(on)
Turn-On Delay Time
—
25
VDD = -50V, ID = -6.7A
tr
Rise Time
—
50
VGS =-12V, RG = 7.5
td(off)
Turn-Off Delay Time
—
45
tf
Fall Time
—
125
LS + LD
Total Inductance
—
7.0
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
—
1250
—
VGS = 0V, VDS = -25V
Coss
Output Capacitance
—
318
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
28
—
Rg
Internal Gate Resistance
—
8.0
—
f = 1.0MHz, open drain
nA
nH
ns
A
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
—
5.0
RthJA
Junction-to-Ambient
—
175
°C/W
Typical socket mount
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