參數(shù)資料
型號(hào): IRHF58130PBF
元件分類(lèi): JFETs
英文描述: 11.7 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
封裝: HERMETIC SEALED, MODIFIED TO-39, 3 PIN
文件頁(yè)數(shù): 8/8頁(yè)
文件大小: 128K
代理商: IRHF58130PBF
IRHF57130, JANSR2N7493T2
Pre-Irradiation
8
www.irf.com
Pulse width
300
μ
s; Duty Cycle
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 2.53 mH
Peak IL = 11.7A, VGS = 12V
ISD
11.7A, di/dt
216A/
μ
s,
VDD
100V, TJ
150°C
Case Outline and Dimensions — TO-205AF (Modified TO-39)
Footnotes:
!
" #
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER :
205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 04/2006
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