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參數(shù)資料
| 型號(hào)： | IRHF58130PBF |
| 元件分類： | JFETs |
| 英文描述： | 11.7 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封裝： | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | IRHF58130PBF |
www.irf.com
5
Pre-Irradiation
IRHF57130, JANSR2N7493T2
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
Q , Total Gate Charge (nC)
20
30
40
50
0
4
8
12
16
20
V
FOR TEST CIRCUIT
SEE FIGURE
I =
13
11.7A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
0.0
0.5
V ,Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
I
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
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