參數(shù)資料
型號: IRHF58034
英文描述: 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
中文描述: 60V的1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 205AF包
文件頁數(shù): 6/8頁
文件大小: 129K
代理商: IRHF58034
IRHF57Z30
Pre-Irradiation
6
www.irf.com
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
μs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
25
50
T , Case Temperature (°
75
100
125
150
0
5
10
15
20
25
I
D
LIMITED BY PACKAGE
0.01
0.00001
0.1
1
10
0.0001
0.001
t , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
T
t
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
V
GS
相關(guān)PDF資料
PDF描述
IRHF58Z30 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39
IRHF593110 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.6A I(D) | TO-205AF
IRHF593230 -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
IRHF597110 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.6A I(D) | TO-205AF
IRHF597230 -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
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