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參數(shù)資料
| 型號(hào)： | IRHE57133SE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 9A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的| N溝道| 130V五（巴西）直| 9A條（丁）| LLCC |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IRHE57133SE |
www.irf.com
5
Pre-Irradiation
IRHE57034
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
600
1200
1800
2400
3000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
Q , Total Gate Charge (nC)
20
30
40
50
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
12A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
0.2
0.8
1.4
2.0
2.6
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 150 C
°
T = 25 C
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
1
0ms
OPERATION IN THIS AREA LIMITED BY
100μs
RDS (on)
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