參數(shù)資料
型號(hào): IRHE8110
英文描述: 100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
中文描述: 100V的1000kRad高可靠性單個(gè)N -溝道工貿(mào)署在18硬化MOSFET的引腳LCC封裝
文件頁數(shù): 1/12頁
文件大小: 280K
代理商: IRHE8110
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
3.5
2.2
14
15
0.12
±20
68
5.5
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s)
0.42 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(LCC-18)
04/15/02
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHE7110 100K Rads (Si)
IRHE3110 300K Rads (Si)
IRHE4110 600K Rads (Si)
IRHE8110 1000K Rads (Si)
0.60
0.60
0.60
0.60
3.5A
3.5A
3.5A
3.5A
For footnotes refer to the last page
IRHE7110
100V, N-CHANNEL
HEXFET
RAD Hard
TECHNOLOGY
LCC-18
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
PD - 90732E
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