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參數(shù)資料
| 型號： | IRHE53034 |
| 英文描述： | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package |
| 中文描述： | 60V的100kRad高可靠性單個N -溝道工貿(mào)署在18硬化MOSFET的引腳LCC封裝 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IRHE53034 |
www.irf.com
5
Pre-Irradiation
IRHE57034
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
600
1200
1800
2400
3000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
Q , Total Gate Charge (nC)
20
30
40
50
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
12A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
0.2
0.8
1.4
2.0
2.6
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 150 C
°
T = 25 C
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
1
0ms
OPERATION IN THIS AREA LIMITED BY
100μs
RDS (on)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHE53Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | LLCC |
| IRHE54Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | LLCC |
| IRHE57034 | 60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package |
| IRHE57133SE | TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 9A I(D) | LLCC |
| IRHE57Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | LLCC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHE53130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHE53133SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHE53230SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHE53234SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHE53Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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