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參數(shù)資料
| 型號： | IRHE53034 |
| 英文描述： | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package |
| 中文描述： | 60V的100kRad高可靠性單個N -溝道工貿(mào)署在18硬化MOSFET的引腳LCC封裝 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 120K |
| 代理商： | IRHE53034 |
IRHE57034
Pre-Irradiation
2
www.irf.com
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
12
48
1.5
135
420
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
Typ
—
0.058
Max Units
— V VGS = 0V, ID = 1.0mA
—
V/°C
Reference to 25°C, ID = 1.0mA
Test Conditions
BVDSS
—
—
0.08
VGS = 12V, ID = 7.4A
2.0
5.0
—
—
—
—
—
—
4.0
—
10 A
25 VDS = 48V,
VGS = 0V, TJ = 125°C
100 nA
-100
45 VGS =12V, ID = 12A
11 nC VDS = 30V
15
25 VDD = 30V, ID = 12A,
100 ns
40
30
—
nH
Measured from the center of
drain pad to center of source pad
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.4A
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
VGS = -20V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1250
520
16
— VGS = 0V, VDS = 25V
— pF f = 1.0MHz
—
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
RthJA
Junction-to-Ambient
Min Typ Max
—
—
— — 19
— — 75
Units
Test Conditions
5.0
soldered to a copper-clad PC board
°C/W
相關PDF資料 |
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|---|---|
| IRHE53Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | LLCC |
| IRHE54Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | LLCC |
| IRHE57034 | 60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package |
| IRHE57133SE | TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 9A I(D) | LLCC |
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相關代理商/技術參數(shù) |
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|---|---|
| IRHE53130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHE53133SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHE53230SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHE53234SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHE53Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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