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參數(shù)資料
| 型號(hào)： | IRHE3230 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝（持有LCC - 18） |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 269K |
| 代理商： | IRHE3230 |
www.irf.com
5
Pre-Irradiation
IRHE7230, JANSR2N7262U
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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PDF描述 |
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| IRHE4230 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| IRHF53034 | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHF54034 | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHF57034 | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHF58034 | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IRHE3330SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHE4110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHE4110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHE4110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHE4130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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