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參數(shù)資料
| 型號(hào)： | IRH8450 |
| 英文描述： | 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package |
| 中文描述： | 500V 1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 204AA封裝 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 350K |
| 代理商： | IRH8450 |
IRH7450, IRH8450 Devices
2
www.irf.com
nA
nH
ns
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0MHz
Modified MOSFET sym-
inductances.
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
RthCS
Case-to-Sink
Min Typ Max
—
—
—
—
—
0.12
Units
Test Conditions
0.83
30
—
°C/W
Typical socket mount
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
500
—
Typ
—
0.6
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
4.0
—
—
—
— 0.50
VGS = 12V, ID = 11A
—
4.0
V
VDS = VGS, ID = 1.0mA
—
—
S (
)
VDS > 15V, IDS = 7A
—
50
VDS= 0.8 x Max Rating,VGS=0V
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
—
100
—
-100
—
150
—
30
nC
VDS = Max Rating x 0.5
—
75
—
45
VDD = 250V, ID = 11A,
—
190
—
190
— 130
5.0
—
0.45
VGS = 12V, ID = 7.0A
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time —
Internal Drain Inductance
—
—
—
—
—
—
—
—
VGS = 20V
VGS = -20V
VGS =12V, ID =11A
RG = 2.35
—
LS
Internal Source Inductance
—
13
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4000
330
52
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
11
44
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.6
1100
16
V
ns
μ
C
T
j
= 25°C, IS = 11A, VGS = 0V
Tj = 25°C, IF = 11A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
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