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參數(shù)資料
| 型號(hào)： | IRH8450 |
| 英文描述： | 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package |
| 中文描述： | 500V 1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 204AA封裝 |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 350K |
| 代理商： | IRH8450 |
IRH7450, IRH8450 Devices
12
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
VDD = 25V, Starting TJ = 25°C,
Peak IL = 11A, L>7.4mH RG=25
ISD
≤
11A, di/dt
≤
120A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG =2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, codition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Pre-Irradiation
See Figures 18 through 30 for pre-irradiation
curves
Case Outline and Dimensions — TO-204AE
Conforms to JEDEC Outline TO-204AE
Dimensions in Millimeters and ( Inches )
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IR ITALY:
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IR FAR EAST:
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IR SOUTHEAST ASIA:
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IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 10/98
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