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參數(shù)資料
| 型號： | IRH4054 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗輻射功率MOSFET的通孔 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 240K |
| 代理商： | IRH4054 |
www.irf.com
5
Pre-Irradiation
IRH7054
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
V
, Drain-to-Source Voltage (V)
C,
Capacitance
(pF)
DS
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
40
80
120
160
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
35A
V
= 30V
DS
V
= 48V
DS
1
10
100
1000
0.4
1.0
1.6
2.2
2.8
3.4
4.0
V
,Source-to-Drain Voltage (V)
I
,Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
°
J
C
V
, Drain-to-Source Voltage (V)
I
,Drain
Current
(A)
I
,Drain
Current
(A)
DS
D
100us
1ms
10ms
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