- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄296208 > IRH4054 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE PDF資料下載
參數(shù)資料
| 型號(hào)： | IRH4054 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| 中文描述： | 抗輻射功率MOSFET的通孔 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 240K |
| 代理商： | IRH4054 |
2
www.irf.com
IRH7054
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min
Min Typ
Typ
Typ Max
Max
Max Units
Units
Test Conditions
IS
Continuous Source Current (Body Diode)
45
ISM
Pulse Source Current (Body Diode)
210
VSD Diode Forward Voltage
1.4
V
Tj = 25°C, IS = 35A, VGS = 0V
trr
Reverse Recovery Time
280
nS
Tj = 25°C, IF = 35A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
2.2
C
VDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min
Min Typ
Typ
Typ Max
Max
Max Units
Units
Test Conditions
RthJC
Junction-to-Case
0.83
RthJA
Junction-to-Ambient
30
°C/W
Typical socket mount
RthCS
Case-to-Sink
0.12
Electrical Characteristics
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Typ Max
Max
Max Units
Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
0.053
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.025
VGS = 12V, ID = 32A
Resistance
0.028
VGS = 12V, ID = 45A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
12
S ( )VDS > 15V, IDS = 35A
IDSS
Zero Gate Voltage Drain Current
25
VDS= 48V ,VGS=0V
250
VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
200
VGS =12V, ID = 35A
Qgs
Gate-to-Source Charge
60
nC
VDS = 30V
Qgd
Gate-to-Drain (Miller) Charge
75
td(on)
Turn-On Delay Time
27
VDD =30V, ID = 35A
tr
Rise Time
100
VGS =12V, RG = 2.35
td(off)
Turn-Off Delay Time
75
tf
Fall Time
75
LS + LD
Total Inductance
10
Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in.
from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
4100
VGS = 0V, VDS = 25V
Coss
Output Capacitance
2000
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
560
nA
nH
ns
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRKH72/10A | 117.75 A, 1000 V, SCR, TO-240AA |
| IRKH91/04A | 149.15 A, 400 V, SCR, TO-240AA |
| IRKH91/06A | 149.15 A, 600 V, SCR, TO-240AA |
| IRKH91/08A | 149.15 A, 800 V, SCR, TO-240AA |
| IRKH91/10A | 149.15 A, 1000 V, SCR, TO-240AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRH4130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH4150 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH4230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH4250 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH4450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。