參數(shù)資料
型號(hào)： IRGS15B60KD
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁(yè)數(shù)： 1/16頁(yè)
文件大小： 322K
代理商： IRGS15B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
6/24/02
Benefits
Benchmark Efficiency for Motor Control.
www.irf.com
1
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
Max.
600
31
15
62
62
31
15
64
± 20
208
83
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.6
2.1
–––
62
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
°C/W
g
E
G
n-channel
C
V
CES
= 600V
I
C
= 15A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
D
2
Pak
IRGS15B60KD
TO-220AB
IRGB15B60KD
TO-262
IRGSL15B60KD
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