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參數資料
| 型號： | IRGPC30MD2 |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復二極管的絕緣柵雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）的超快軟恢復二極管（帶超快軟恢復二極管的絕緣柵雙極型晶體管） |
| 文件頁數： | 5/9頁 |
| 文件大小： | 146K |
| 代理商： | IRGPC30MD2 |
IRGPC30MD2
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
3.40
3.44
3.48
3.52
3.56
3.60
3.64
3.68
3.72
3.76
3.80
0
10
20
30
40
50
60
T
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25°C
I = 16A
0.1
1
10
100
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100 120 140 160
T
A
I = 32A
I = 16A
I = 8.0A
R = 23
V = 15V
V = 480V
0
4
8
12
16
20
0
10
20
30
40
G
V
Q , Total Gate Charge (nC)
A
V = 400V
I = 16A
0
200
400
600
800
1000
1200
1400
1
10
100
V , Collector-to-Emitter Voltage (V)
C
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
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