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參數(shù)資料
| 型號： | IRGPC30MD2 |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）的超快軟恢復(fù)二極管（帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 146K |
| 代理商： | IRGPC30MD2 |
IRGPC30MD2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; V
GE
=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Notes:
----
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage----
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
----
0.65
----
1.9
----
2.7
----
2.2
3.0
----
-12
3.3
6.5
----
----
----
----
----
1.4
----
1.3
----
----
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 16A
I
C
= 26A
I
C
= 16A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
----
----
2.9
----
----
5.5
---- mV/°C V
CE
= V
GE
, I
C
= 250μA
----
S
V
CE
= 100V, I
C
= 16A
250
μA
V
GE
= 0V, V
CE
= 600V
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 12A
1.6
I
C
= 12A, T
J
= 150°C
±100
nA
V
GE
= ±20V
V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
----
35
----
7.4
----
14
----
68
----
130
----
330
----
310
----
1.5
----
2.1
----
3.6
10
----
Conditions
I
C
= 16A
V
CC
= 400V
See Fig. 8
T
J
= 25°C
I
C
= 16A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
53
11
21
----
----
500
470
----
----
5.4
----
nC
ns
mJ
μs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 23
, V
CPK
< 500V
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 14A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 12A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
66
120
580
630
5.7
13
750
110
9.3
42
80
3.5
5.6
80
220
----
----
----
----
----
----
----
----
----
60
120
6.0
10
180
600
ns
mJ
nH
pF
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
μs
----
di
(rec)M
/dtDiode Peak Rate of Fall of Recovery ----
T
J
= 25°C See Fig.
T
J
= 125V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 23
, ( See fig. 19 )
180
120
A/μs
During t
b
----
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
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