參數(shù)資料
型號(hào)： IRGP4062DPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/12頁
文件大?。?/td> 964K
代理商： IRGP4062DPBF
IRGB/P4062DPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100μH, R
G
= 10
.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.30
1.60
2.03
2.04
—
-18
17
2.0
775
1.80
1.28
—
Max. Units Conditions
—
V
V
GE
= 0V, I
C
= 100μA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
1.95
I
C
= 24A, V
GE
= 15V, T
J
= 25°C
—
V
I
C
= 24A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 24A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 700μA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
—
S
V
CE
= 50V, I
C
= 24A, PW = 80μs
25
μA
V
GE
= 0V, V
CE
= 600V
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
2.6
V
I
F
= 24A
—
I
F
= 24A, T
J
= 175°C
±100
nA
V
GE
= ±20V
Ref.Fig
CT6
CT6
5,6,7
V
CE(on)
Collector-to-Emitter Saturation Voltage
9,10,11
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
9, 10,
11, 12
V
FM
Diode Forward Voltage Drop
8
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
50
13
21
115
600
715
41
22
104
29
420
840
1260
40
24
125
39
1490
129
45
Max. Units
75
20
31
201
700
901
53
31
115
41
—
—
—
—
—
—
—
—
—
—
Ref.Fig
I
C
= 24A
V
GE
= 15V
V
CC
= 400V
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
R
G
= 10
, L = 200μH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10
, L = 200μH, L
S
= 150nH, T
J
= 25°C
24
nC
CT1
CT4
μJ
CT4
I
C
= 24A, V
CC
= 400V, V
GE
=15V
μJ
R
G
=10
, L=100μH, L
S
=150nH, T
J
= 175°C
13, 15
CT4
Energy losses include tail & diode reverse recovery
I
C
= 24A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10
, L = 200μH, L
S
= 150nH
T
J
= 175°C
WF1, WF2
14, 16
CT4
WF1
WF2
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 96A
V
CC
= 480V, Vp =600V
Rg = 10
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
Rg = 10
, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 24A
V
GE
= 15V, Rg = 10
, L =200μH, L
s
= 150nH
23
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
SCSOA
Short Circuit Safe Operating Area
5
—
—
μs
22, CT3
WF4
Erec
t
rr
I
rr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
621
89
37
—
—
—
μJ
ns
A
17, 18, 19
20, 21
WF3
Conditions
相關(guān)PDF資料
PDF描述
IRGB420UD2 320 x 240 pixel format, LED or CFL Backlight
IRGB420 INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
IRGB420U INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
IRGB430UD2 320 x 240 pixel format, LED or CFL Backlight
IRGB430 INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGP4062-EPBF 制造商:International Rectifier 功能描述:IGBT 600V 48A 250W TO-247AD 制造商:International Rectifier 功能描述:TUBE / 600V 24A TO-247AD 制造商:International Rectifier 功能描述:Transistor IGBT N-ch 600V 24A TO-247AD
IRGP4063D1-EPBF 制造商:International Rectifier 功能描述:600V 48A COPAK-247AD - Rail/Tube 制造商:International Rectifier 功能描述:IGBT 600V 100A 330W TO-247AD 制造商:International Rectifier 功能描述:IR IGBT 600V 600V 48A COPAK-247AD
IRGP4063D1PBF 制造商:International Rectifier 功能描述:600V 48A COPAK-247AC - Rail/Tube 制造商:International Rectifier 功能描述:IGBT 600V 100A 330W TO247AC 制造商:International Rectifier 功能描述:IR IGBT 600V 600V 48A COPAK-247AC 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube
IRGP4063D-EPBF 功能描述:IGBT 晶體管 600V UltraFast IGBT 48A 5uS 1.65V VCE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP4063DPBF 功能描述:IGBT 晶體管 600V UltraFast Trnch Appliance motion app RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*