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參數(shù)資料
| 型號： | IRGBC30M-S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成電路\u003d 16A條） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 413K |
| 代理商： | IRGBC30M-S |
C-704
Fig. 5
- Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4
- Maximum Collector Current vs.
Case Temperature
IRGBC30UD2
Fig. 6
- Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0
5
10
15
20
25
25
50
75
100
125
150
M
T , Case Temperature (°C)
V = 15V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100 120
140 160
C
V
V = 15V
80μs PULSE WIDTH
I = 24A
I = 12A
I = 6.0A
0.01
0.00001
0.1
1
10
0.0001
0.001
t , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
t
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2
2. Peak T = P x Z + TC
To Order
Next Data Sheet
Index
Previous Datasheet
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGBC30S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A) |
| IRGBC30U | 制造商:Int'L Rectifier 功能描述:Trans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220AB |
| IRGBC30UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGBC36 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-220AB |
| IRGBC40 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A) |
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