參數(shù)資料
型號： IRGBC30M-S
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成電路\u003d 16A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 413K
代理商： IRGBC30M-S
C-702
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
—
29
—
4.8
—
12
—
67
—
56
—
170
—
140
—
0.70
—
0.80
—
1.5
—
61
—
51
—
190
—
190
—
1.9
—
7.5
—
680
—
100
—
11
—
42
—
80
—
3.5
—
5.6
—
80
—
220
—
180
—
120
Conditions
I
C
= 12A
V
CC
= 400V
See Fig. 8
T
J
= 25°C
I
C
= 12A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
36
6.8
17
—
—
250
270
—
—
2.5
—
—
—
—
—
—
—
—
—
60
120
6.0
10
180
600
—
—
nC
ns
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 12A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 12A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
—
0.63
—
2.2
—
2.7
—
2.4
3.0
—
—
-11
3.1
8.6
—
—
—
—
2500
—
1.4
—
1.3
—
—
±100
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 12A
I
C
= 23A
I
C
= 12A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 12A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 12A
I
C
= 12A, T
J
= 150°C
V
GE
= ±20V
—
—
3.0
—
—
5.5
—
—
250
V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
mV/°C
S
μA
V
FM
Diode Forward Voltage Drop
1.7
1.6
V
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
nA
IRGBC30UD2
Pulse width
≤
80μs; duty factor
≤
0.1%.
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
=23
, ( See fig. 19 )
Pulse width 5.0μs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Notes:
Next Data Sheet
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