參數(shù)資料
型號： IRGBC20KD2
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.0A)
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成電路\u003d 6.0a版）
文件頁數(shù)： 2/6頁
文件大小： 249K
代理商： IRGBC20KD2
C-52
IRGBC20F
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
16
—
2.4
—
7.8
—
24
—
13
—
160
—
310
—
0.18
—
0.90
—
1.08
—
25
—
18
—
210
—
600
—
1.65
—
7.5
—
340
—
63
—
5.9
Conditions
21
3.4
10
—
—
270
600
—
—
2.0
—
—
—
—
—
—
—
—
—
I
C
= 9.0A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 9.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
nC
See Fig. 8
ns
mJ
See Fig. 9, 10, 11, 14
T
J
= 150°C,
I
C
= 9.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
See Fig. 10, 14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
ns
mJ
nH
pF
See Fig. 7
Notes:
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
20
—
—
0.72
—
2.0
—
2.6
—
2.3
3.0
—
—
-11
2.9
5.1
—
—
—
—
1000
—
—
±100
Conditions
—
—
—
2.8
—
—
5.5
—
—
250
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 9.0A
I
C
= 16A
I
C
= 9.0A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 9.0A
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 50
, ( See fig. 13a )
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