參數(shù)資料
型號(hào): IRGBC30FD2
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A)
中文描述: 絕緣柵雙極型晶體管,超快軟恢復(fù)(VCES和\u003d 600V的,@和VGE \u003d 15V的,集成電路\u003d 31A條)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 413K
代理商: IRGBC30FD2
C-701
IRGBC30UD2
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
TM
soft ultrafast diodes
E
G
n-channel
C
V
CES
= 600V
V
CE(sat)
3.0V
@V
GE
= 15V, I
C
= 12A
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
0.50
2 (0.07)
Max.
1.2
2.5
80
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
PD - 9.796A
TO-220AB
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
23
12
92
92
12
92
± 20
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Absolute Maximum Ratings
Thermal Resistance
Revision 1
Next Data Sheet
Index
Previous Datasheet
To Order
相關(guān)PDF資料
PDF描述
IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
IRGBC30 Aluminum Polymer SMT Capacitor; Capacitance: 470uF; Voltage: 2.5V; Case Size: 8x7 mm; Packaging: Tape & Reel
IRGBC30F Aluminum Polymer SMT Capacitor; Capacitance: 820uF; Voltage: 2.5V; Case Size: 10x8 mm; Packaging: Tape & Reel
IRGBC30K-S Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
IRGBC30MD2 Aluminum Polymer SMT Capacitor; Capacitance: 330uF; Voltage: 4V; Case Size: 8x7 mm; Packaging: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGBC30K 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
IRGBC30KD2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IRGBC30KD2-S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IRGBC30K-S 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
IRGBC30M 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours