參數(shù)資料
型號： IRGB4056DPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/10頁
文件大?。?/td> 772K
代理商： IRGB4056DPBF
IRGB4056DPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100μH, R
G
= 22
.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.30
1.55
1.90
1.97
—
-18
7.7
2.0
475
2.10
1.61
—
Max. Units Conditions
—
V
V
GE
= 0V, I
C
= 100μA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
1.85
I
C
= 12A, V
GE
= 15V, T
J
= 25°C
—
V
I
C
= 12A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 12A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 350μA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
—
S
V
CE
= 50V, I
C
= 12A, PW = 80μs
25
μA
V
GE
= 0V, V
CE
= 600V
—
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
3.10
V
I
F
= 12A
—
I
F
= 12A, T
J
= 175°C
±100
nA
V
GE
= ±20V
Ref.Fig
CT6
CT6
5,6,7
V
CE(on)
Collector-to-Emitter Saturation Voltage
9,10,11
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
9, 10,
11, 12
V
FM
Diode Forward Voltage Drop
8
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
25
7.0
11
75
225
300
31
17
83
24
185
355
540
30
18
102
41
765
52
23
Max. Units
38
11
16
118
273
391
40
24
94
31
—
—
—
—
—
—
—
—
—
—
Ref.Fig
I
C
= 12A
V
GE
= 15V
V
CC
= 400V
I
C
= 12A, V
CC
= 400V, V
GE
= 15V
R
G
= 22
, L = 200μH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 12A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 22
, L = 200μH, L
S
= 150nH, T
J
= 25°C
24
nC
CT1
CT4
μJ
CT4
I
C
= 12A, V
CC
= 400V, V
GE
=15V
μJ
R
G
=22
, L=100μH, L
S
=150nH, T
J
= 175°C
13, 15
CT4
Energy losses include tail & diode reverse recovery
I
C
= 12A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 22
, L = 200μH, L
S
= 150nH
T
J
= 175°C
WF1, WF2
14, 16
CT4
WF1
WF2
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 48A
V
CC
= 480V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 12A
V
GE
= 15V, Rg = 22
, L =200μH, L
s
= 150nH
23
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
SCSOA
Short Circuit Safe Operating Area
5
—
—
μs
22, CT3
WF4
Erec
t
rr
I
rr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
280
68
19
—
—
—
μJ
ns
A
17, 18, 19
20, 21
WF3
Conditions
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