參數(shù)資料
型號(hào)： IRGB30B60KPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 絕緣柵雙極晶體管
文件頁(yè)數(shù)： 2/13頁(yè)
文件大小： 333K
代理商： IRGB30B60KPBF
IRGB30B60KPbF, IRGS/L30B60K
2
www.irf.com
Note
to
are on page 13
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min.
600
—
—
—
—
3.5
—
—
—
—
—
—
Typ. Max. Units Conditions
—
—
V
0.40
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
1.95
2.35
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
2.40
2.75
V
I
C
= 30A, V
GE
= 15V, T
J
= 150°C
2.6
2.95
I
C
= 30A, V
GE
= 15V, T
J
= 175°C
4.5
5.5
V
V
CE
= V
GE
, I
C
= 250μA
-10
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-150°C)
18
—
S
V
CE
= 50V, I
C
= 50A, PW = 80μs
5.0
250
V
GE
= 0V, V
CE
= 600V
1000
2000
μA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1830
3000
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
—
±100
nA
V
GE
= ±20V, V
CE
= 0V
Ref.Fig.
V
GE
= 0V, I
C
= 500μA
5,6,7
V
CE(on)
Collector-to-Emitter Voltage
8,9,10
V
GE(th)
V
GE(th)
/
T
J
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
8,9,10
11
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ. Max. Units
102
153
14
21
44
66
350
620
825
955
1175
1575
46
60
28
39
185
200
31
40
635
1085
1150
1350
1785
2435
46
60
28
39
205
235
32
42
7.5
—
1750
2500
160
255
60
90
Conditions
Ref.Fig.
I
C
= 30A
V
CC
= 400V
V
GE
= 15V
I
C
= 30A, V
CC
= 400V
μJ V
GE
= 15V, R
G
= 10
, L = 200μH
T
J
= 25°C
I
C
= 30A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 10
, L = 200μH
T
J
= 25°C
17
nC
CT1
CT4
CT4
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10
, L = 200μH
T
J
= 150°C
I
C
= 30A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 10
, L = 200μH
T
J
= 150°C
CT4
μJ
12,14
WF1,WF2
13,15
CT4
WF1
WF2
nH
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 120A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
=10
T
J
= 150°C, Vp = 600V, R
G
= 10
V
CC
=360V,V
GE
= +15V to 0V
pF
16
4
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
μs
CT3
WF3
I
SC
(Peak)
Peak Short Circuit Collector Current
—
200
—
A
WF3
相關(guān)PDF資料
PDF描述
IRGB4056DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4061DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4062DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP4062DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB420UD2 320 x 240 pixel format, LED or CFL Backlight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGB4045DPBF 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGB4055PBF 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 300V 110A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 110A 3PIN TO-220AB - Bulk 制造商:International Rectifier 功能描述:IGBT 300V TO-220
IRGB4056DPBF 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGB4059DPBF 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGB4060DPBF 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*