參數(shù)資料
型號： IRGB15B60KDPbF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/15頁
文件大小： 832K
代理商： IRGB15B60KDPBF
IRGB/S/SL15B60KDPbF
2
www.irf.com
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
–––
–––
0.3
1.5
1.80 2.20
–––
2.05 2.50
–––
2.10 2.60
3.5
4.5
-10
–––
10.6
–––
5.0
–––
500 1000
–––
1.20 1.45
–––
1.20 1.45
–––
––– ±100
Conditions
–––
–––
V
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V, I
C
= 1.0mA, (25°C-150°C)
I
C
= 15A, V
GE
= 15V
I
C
= 15A, V
GE
= 15V T
J
= 125°C
I
C
= 15A, V
GE
= 15V T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 1.0mA, (25°C-150°C)
V
CE
= 50V, I
C
= 20A, PW=80μs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 15A
I
C
= 15A T
J
= 150°C
V
GE
= ±20V
V/°C
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
5.5
––– mV/°C
–––
150
V
S
μA
V
FM
Diode Forward Voltage Drop
V
nA
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Ref.Fig.
5, 6,7
9, 10,11
12
9, 10,11
Parameter
Qg
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Qgc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
56
–––
7.0
–––
26
–––
220
–––
340
–––
560
–––
34
–––
16
–––
184
–––
20
–––
355
–––
490
–––
835 1070
–––
34
–––
18
–––
203
–––
28
–––
850
–––
75
–––
35
Conditions
84
10
39
330
455
785
44
22
200
26
470
600
I
C
= 15A
V
CC
= 400V
V
GE
= 15V
I
C
= 15A, V
CC
= 400V
V
GE
= 15V,R
G
= 22
,
L = 200μH
Ls = 150nH
I
C
= 15A, V
CC
= 400V
V
GE
= 15V, R
G
= 22
,
L = 200μH
Ls = 150nH, T
J
= 25°C
nC
μJ
T
J
= 25°C
ns
I
C
= 15A, V
CC
= 400V
V
GE
= 15V,R
G
= 22
,
L = 200μH
Ls = 150nH
I
C
= 15A, V
CC
= 400V
V
GE
= 15V, R
G
= 22
,
L = 200μH
Ls = 150nH, T
J
= 150°C
μJ
T
J
= 150°C
44
25
226
36
–––
–––
–––
ns
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 62A, Vp =600V
V
CC
= 500V, V
GE
= +15V to 0V,
T
J
= 150°C, Vp =600V,R
G
= 22
V
CC
= 360V, V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 400V, I
F
= 15A, L = 200μH
V
GE
= 15V,R
G
= 22
,
Ls = 150nH
pF
μs
Erec
t
rr
I
rr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
–––
–––
–––
540
92
29
720
111
33
μJ
ns
A
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
–––
Ref.Fig.
CT1
CT4
CT4
13,15
WF1WF2
14, 16
CT4
WF1
WF2
4
CT2
CT3
WF4
17,18,19
20,21
CT4,WF3
CT4
R
G
= 22
Note
to
are on page 15
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