參數(shù)資料
型號： IRG4ZH50KD
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復二極管
文件頁數(shù)： 5/10頁
文件大?。?/td> 243K
代理商： IRG4ZH50KD
IRG4ZH50KD
www.irf.com
5
0
10
R
G
, Gate Resistance (
)
20
30
40
50
5.4
5.8
6.2
6.6
7.0
T
V = 800V
V = 15V
T = 25 C
I = 29A
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
1
10
100
T , Junction Temperature ( C )
T
R = Ohm
V = 15V
V = 800V
I = A
58
I = A
29
I = A
14.5
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs.
Gate Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
1
10
100
0
1000
2000
3000
4000
V , Collector-to-Emitter Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ce
f = 1MHz
+ C
gc ,
+ C
C SHORTED
GE
ies
res
oes
ge
gc
gc
C
ies
C
oes
C
res
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
V
I
= 400V
= 29A
CC
C
相關PDF資料
PDF描述
IRGB14C40LPBF IGBT with on-chip Gate-Emitter and Gate-Collector clamps
IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB30B60KPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGB4056DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4061DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
相關代理商/技術參數(shù)
參數(shù)描述
IRG4ZH70UD 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4ZH71KD 制造商:IRF 制造商全稱:International Rectifier 功能描述:Surface Mountable Short Circuit Rated UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)
IRG6B330UDPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:PDP TRENCH IGBT
IRG6I320UPBF 功能描述:IGBT 晶體管 330V PLASMA DISPLAY PANEL TRENCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG6I330U-110P 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*