參數(shù)資料
型號(hào)： IRG4ZH50KD
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 243K
代理商： IRG4ZH50KD
IRG4ZH50KD
www.irf.com
2
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
190
—
25
—
70
—
110
—
43
—
150
—
200
—
3.20
—
2.28
—
5.48
10
—
Conditions
280
38
110
—
—
230
290
—
—
6.5
—
I
C
= 29A
V
CC
= 400V
V
GE
= 15V
nC
see figure 8
T
J
= 25°C
I
C
= 29A, V
CC
= 800V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
and diode reverse recovery
see figures 9,10,18
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0
T
J
= 150°C, see figures 10,11,18
I
C
= 29A, V
CC
= 800V
V
GE
= 15V, R
G
= 5.0
,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C see figure
T
J
= 125°C 14 I
F
= 16A
T
J
= 25°C see figure
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C see figure
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C see figure
T
J
= 125°C 17
mJ
μs
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
73
72
290
390
10.12
2.0
2800
140
53
90
164
5.8
8.3
260
680
120
76
—
—
—
—
—
—
—
—
—
135
245
10
15
675
1838
—
—
mJ
nH
pF
see figure 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
DV
(BR)CES
/DT
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
1200
—
—
0.91
—
2.79
—
3.32
—
2.66
3.0
—
—
-10
14
21
—
—
—
—
—
2.5
—
2.1
—
—
Conditions
—
—
3.5
—
—
6.0
—
—
250
6500
3.5
—
±100
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 29A
I
C
= 54A
I
C
= 29A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 29A
μA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
I
C
= 16A
I
C
= 16A, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
GE
= 15V
see figures 2, 5
V
V
GE(th)
DV
GE(th)
/DT
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
see figure 13
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
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