參數(shù)資料
型號： IRG4PH40UDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)DIDDE
文件頁數(shù)： 2/11頁
文件大?。?/td> 679K
代理商： IRG4PH40UDPBF
IRG4PH40UDPbF
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
—
86
—
13
—
29
—
46
—
35
—
97
—
240
—
1.80
—
1.93
—
3.73
—
42
—
32
—
240
—
510
—
7.04
—
13
—
1800
—
120
—
18
—
63
—
106
—
4.5
—
6.2
—
140
—
335
—
133
—
85
Conditions
130
20
44
—
—
150
360
—
—
4.6
—
—
—
—
—
—
—
—
—
95
160
8.0
11
380
880
—
—
I
C
= 21A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 21A, V
CC
= 800V
V
GE
= 15V, R
G
= 10
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
nC
See Fig. 8
ns
mJ
T
J
= 150°C, See Fig. 11, 18
I
C
= 21A, V
CC
= 800V
V
GE
= 15V, R
G
= 10
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 8.0A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
1200
—
—
0.43
—
2.43
—
2.97
—
2.47
3.0
—
—
-11
16
24
—
—
—
—
—
2.6
—
2.4
—
—
Conditions
—
—
3.1
—
—
6.0
—
—
250
5000
3.3
3.1
±100
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 21A
I
C
= 41A
I
C
= 21A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 21A
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
I
C
= 8.0A
I
C
= 8.0A, T
J
= 125°C
nA
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
相關(guān)PDF資料
PDF描述
IRG4PH40U INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)
IRG4PH50KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
IRG4PH50 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
IRG4PH50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
IRG4PH50UDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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