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參數(shù)資料
| 型號： | IRG4PC60U-PPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT |
| 中文描述： | 絕緣柵雙極晶體管IGBT的速度超快速 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 240K |
| 代理商： | IRG4PC60U-PPBF |
IRG4PC60U-PPbF
www.irf.com
3
!
0.0
1.0
2.0
3.0
4.0
5.0
VCE , Collector-to-Emitter Voltage (V)
0.1
1
10
100
1000
IC
TJ = 150°C
TJ = 25°C
VGE = 15V
20μs PULSE WIDTH
4
5
6
7
8
9
10
11
VGE, Gate-to-Emitter Voltage (V)
1
10
100
1000
IC
TJ = 150°C
TJ = 25°C
VCC = 10V
5μs PULSE WIDTH
0.1
1
10
100
f , Frequency ( kHz )
0
10
20
30
40
50
60
L
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 73W for Heatsink Mount
Power Dissipation = 3.5W for typical
PCB socket Mount
60% of rated
voltage
Ideal diodes
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