參數(shù)資料
型號(hào)： IRG4PH50K
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
中文描述： 絕緣門雙極晶體管（IGBTs）（短路額定快速絕緣柵型雙極型晶體管）
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 92K
代理商： IRG4PH50K
C-1
www.irf.com
IRG4PH50K
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.1576
V
CES
= 1200V
V
CE(on) typ.
=
2.77V
@V
GE
= 15V, I
C
= 24A
E
C
G
n-channel
Features
G
High short circuit rating optimized for motor control,
t
sc
=10μs, V
CC
= 720V, T
J
= 125°C, V
GE
= 15V
G
Combines low conduction losses with high
switching speed
G
Latest generation design provides tighter
parameter distribution and higher efficiency than
previous generations
Benefits
G
As a Freewheeling Diode we recommend our HEXFRED
ultrafast, ultrasoft recovery diodes for minimum EMI/Noise
and switching losses in the Diode and IGBT
G
Latest generation 4 IGBTs offer highest power density
motor controls possible
G
This part replaces the IRGPH50K and IRGPH50M devices
TM
TO-247 AB
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200
45
24
90
90
10
±20
190
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Parameter
Typ.
—
0.24
—
6 (0.21)
Max.
0.64
—
40
—
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PH50KD 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH50KDPBF 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PH50K-E 制造商:International Rectifier 功能描述:1200V 36.000A TO-247 / IGBT : JA / DISCR
IRG4PH50KPBF 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PH50KPBF 制造商:International Rectifier 功能描述:IGBT TO-247
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