參數(shù)資料
型號： IRG4PC30K
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 2.21V，@和VGE \u003d 15V的，集成電路\u003d 16A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 121K
代理商： IRG4PC30K
IRG4PC30K
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min. Typ. Max. Units
—
67
—
11
—
25
—
26
—
28
—
130
—
120
—
0.36
—
0.51
—
0.87
10
—
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
100
16
37
—
—
200
170
—
—
1.3
—
I
C
= 16A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25
°
C
I
C
= 16A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 9,10,14
mJ
μs
V
CC
= 400V, T
J
= 125
°
C
V
GE
= 15V, R
G
= 23
, V
CPK
< 500V
T
J
= 150
°
C,
I
C
= 16A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 11,14
T
J
= 25
°
C
,
V
GE
= 15V, R
G
= 23
I
C
= 14A, V
CC
= 480V
Energy losses include "tail"
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
E
ts
L
E
C
ies
C
oes
C
res
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
25
29
190
190
1.2
0.26
0.36
0.62
13
920
110
27
—
—
—
—
—
—
—
—
—
—
—
—
mJ
nH
pF
See Fig. 7
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/ T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
—
18
—
—
0.54
—
2.21
—
2.21
—
2.88
—
2.36
3.0
—
—
-12
5.4
8.1
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
—
2.7
—
—
6.0
—
—
250
2.0
1100
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 14A
I
C
= 16A V
GE
= 15V
I
C
= 28A
I
C
= 16A , T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
=
100V, I
C
= 16A
V
GE
= 0V, V
CE
= 600V
μA
V
GE
= 0V, V
CE
= 10V, T
J
= 25
°
C
V
GE
= 0V, V
CE
= 600V, T
J
= 150
°
C
nA
V
GE
= ±20V
V/
°
C
See Fig.2, 5
V
GE(th)
V
GE(th)
/ T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25
°
C (unless otherwise specified)
V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
Details of note
through
are on the last page
相關PDF資料
PDF描述
IRG4PC30SPBF Replacement for Texas Instruments part number SN74LS158N. Buy from authorized manufacturer Rochester Electronics.
IRG4PC30S INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PC30KD 功能描述:IGBT W/DIODE 600V 28A TO-247AC RoHS:否 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
IRG4PC30KD-206 制造商:International Rectifier 功能描述:600V 23.000A COPAK 247 / IGBT : JA / DIS
IRG4PC30KDPBF 功能描述:IGBT 晶體管 600V UltraFast 8-25kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PC30KDPBF 制造商:International Rectifier 功能描述:IGBT
IRG4PC30KPBF 功能描述:IGBT 晶體管 600V UltraFast 8-25kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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