參數(shù)資料
型號(hào)： IRG4PC20UPBF
廠商： International Rectifier
英文描述： UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A )
中文描述： 超快速速度1GBT（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.85V，@和VGE \u003d 15V的，集成電路\u003d 6.5A）
文件頁數(shù)： 2/8頁
文件大?。?/td> 704K
代理商： IRG4PC20UPBF
IRG4PC20UPbF
2
www.irf.com
PROVISIONAL
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Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Breakdown Voltage Temp. Coefficient
Min.
600
18
–––
–––
Typ.
–––
–––
0.69
1.85
2.27
1.87
–––
-11
4.3
–––
–––
–––
–––
–––
Max. Units
–––
–––
–––
2.1
–––
–––
6.0
–––
–––
250
2.0
1000
100
-100
V
V
V/°C
V
CE(on)
Collector-to-Emitter Saturation Voltage
V
–––
3.0
–––
1.4
–––
–––
–––
–––
–––
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
V
mV/°C
S
μA
I
GES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
(on)
Turn-On Switching Loss
E
(off)
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
27
4.5
10
21
13
86
120
0.10
0.12
0.22
20
14
190
140
0.42
7.5
530
39
7.4
41
6.8
16
–––
–––
130
180
–––
–––
0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
I
C
= 6.5A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
T
J
= 25°C
Energy losses include "tail"
mJ
I
C
= 6.5A, V
CC
= 480V
ns
V
GE
= 15V, R
G
= 50
T
J
= 150°C
Energy losses include "tail"
mJ
nH
Measured 5mm from package
V
GE
= 0V
pF
Conditions
V
GE
= 0V, I
CE
= 250μA
V
GE
= 0V, I
CE
= 1.0A
V
GE
= 0V, I
CE
= 1.0mA
V
GE
= 15V, I
CE
= 6.5A
V
GE
= 15V, I
CE
= 13A
V
GE
= 15V, I
CE
= 6.5A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 250μA
V
GE
= -20V
= 1.0MHz
V
CE
= 30V
V
GE
= 15V
V
CE
= 10V, V
GE
= 0V, T
J
= 25°C
V
CE
= 600V, V
GE
= 0V, T
J
= 150°C
V
GE
= 20V
V
CE
= 600V, V
GE
= 0V
V
CE
= 400V
I
C
= 6.5A
V
CE
= 100V, I
CE
= 6.5A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PC30 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
IRG4PC30F 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PC30FD 制造商:International Rectifier 功能描述:SINGLE IGBT, 600V, 31A, Transistor Type:IGBT, DC Collector Current:31A, Collecto
IRG4PC30FD-E 制造商:International Rectifier 功能描述:600V 31.000A COPAK 247 / IGBT : JA / DIS
IRG4PC30FDPBF 功能描述:IGBT 晶體管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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