參數(shù)資料
型號(hào)： IRG4BC30S-STRL
英文描述： TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB
中文描述： 晶體管| IGBT的|正陳| 600V的五（巴西）國(guó)際消費(fèi)電子展| 18A條一（c）|至263AB
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 135K
代理商： IRG4BC30S-STRL
IRG4BAC50S
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Collector Inductance
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
180
—
24
—
61
—
33
—
30
—
650
—
400
—
0.72
—
8.27
—
8.99
—
31
—
31
—
1080
—
620
—
15
—
2.0
—
5.0
—
4100
—
250
—
48
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
C
L
E
C
ies
C
oes
C
res
Notes:
280
37
92
—
—
980
600
—
—
13
—
—
—
—
—
—
—
—
—
—
I
C
= 41A
V
CC
= 400V
V
GE
= 15V
nC
See Fig. 8
T
J
= 25°C
I
C
= 41A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 9, 10, 14
mJ
T
J
= 150°C,
I
C
= 41A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
See Fig. 11, 14
Measured 5mm from package
mJ
nH
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
—
18
—
—
0.75
—
1.28
—
1.62
—
1.28
3.0
—
—
-9.3
17
34
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
1.36
—
—
6.0
—
—
250
2.0
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 41A V
GE
= 15V
I
C
= 80A
I
C
= 41A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 41A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
g
fe
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10μH, R
G
= 5.0
,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
相關(guān)PDF資料
PDF描述
IRG4BC30S-STRR TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB
IRG4BAC50S Insulated Gate Bipolar Transistors (IGBTs)(標(biāo)準(zhǔn)速度絕緣柵型雙極型晶體管)
IRG4C30W-S
IRG4CC10KB
IRG4CC10SB
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IRG4BC30S-STRR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB
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