參數(shù)資料
型號： IRG4BC30
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.59V，@和VGE \u003d 15V的，集成電路\u003d 17A條）
文件頁數(shù)： 2/8頁
文件大?。?/td> 161K
代理商： IRG4BC30
IRG4BC30K-S
2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min. Typ. Max. Units
—
67
—
11
—
25
—
26
—
28
—
130
—
120
—
0.36
—
0.51
—
0.87
10
—
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
100
16
37
—
—
200
170
—
—
1.3
—
I
C
= 16A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25
°
C
I
C
= 16A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 9,10,14
mJ
μs
V
CC
= 400V, T
J
= 125
°
C
V
GE
= 15V, R
G
= 23
, V
CPK
< 500V
T
J
= 150
°
C,
I
C
= 16A, V
CC
= 480V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
See Fig. 11,14
T
J
= 25
°
C
,
V
GE
= 15V, R
G
= 23
I
C
= 14A, V
CC
= 480V
Energy losses include "tail"
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
E
ts
L
E
C
ies
C
oes
C
res
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
25
29
190
190
1.2
0.26
0.36
0.62
7.5
920
110
27
—
—
—
—
—
—
—
—
—
—
—
—
mJ
mJ
nH
pF
See Fig. 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
—
18
—
—
0.54
—
2.21
—
2.21
—
2.88
—
2.36
3.0
—
—
-12
5.4
8.1
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
—
2.7
—
—
6.0
—
—
250
2.0
1100
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 14A
I
C
= 16A V
GE
= 15V
I
C
= 28A
I
C
= 16A , T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
=
100V, I
C
= 16A
V
GE
= 0V, V
CE
= 600V
μA
V
GE
= 0V, V
CE
= 10V, T
J
= 25
°
C
V
GE
= 0V, V
CE
= 600V, T
J
= 150
°
C
nA
V
GE
= ±20V
V/
°
C
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
Details of note
through
are on the last page
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
相關(guān)PDF資料
PDF描述
IRG4BC30KDS INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
IRG4BC30SS INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
IRG4BC30US INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)
IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
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