參數(shù)資料
型號： IRG4BC20MDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/11頁
文件大?。?/td> 300K
代理商： IRG4BC20MDPBF
2
www.irf.com
Parameter
Min. Typ. Max. Units
600
----
----
0.67
----
1.85
----
2.46
----
2.07
4.0
----
-11
3.0
3.6
----
----
----
----
2500
----
1.4
----
1.3
----
----
±100
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 11A
I
C
= 18A
I
C
= 11A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
(BR)CES
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Collector-to-Emitter Breakdown Voltage
----
----
2.1
----
----
6.5
---- mV/°C V
CE
= V
GE
, I
C
= 250μA
----
S
V
CE
= 100V, I
C
= 11A
250
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 8.0A
1.6
I
C
= 8.0A, T
J
= 150°C
nA
V
GE
= ±20V
V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage ----
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Parameter
Min. Typ. Max. Units
----
39
----
5.3
----
20
----
21
----
37
----
463
----
340
----
0.41
----
2.03
----
2.44
----
19
----
41
----
590
----
600
----
3.49
----
7.5
----
460
----
54
----
14
----
37
----
55
3.5
----
4.5
----
65
----
124
----
240
----
210
Conditions
I
C
= 11A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
I
C
= 11A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
59
8.0
30
----
----
690
510
----
----
3.7
----
----
----
----
----
----
----
----
----
55
90
5.0
8.0
138
360
----
----
nC
See Fig. 8
ns
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 6.5A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 8.0A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
ns
I
rr
Diode Peak Reverse Recovery Current ----
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
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