參數(shù)資料
型號(hào)： IRG4BC20K
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 2.27V，@和VGE \u003d 15V的，集成電路\u003d 9.0,9.0）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 138K
代理商： IRG4BC20K
IRG4BC20K
2
www.irf.com
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
—
18
—
—
0.49
—
2.00
—
2.27
—
3.01
—
2.43
3.0
—
—
-10
2.9
4.3
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
—
2.8
—
—
6.0
—
—
250
2.0
1000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 1.0mA
I
C
= 6.0A
I
C
= 9.0A V
GE
= 15V
I
C
= 16A
I
C
= 9.0A , T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
=
100 V, I
C
= 9.0A
V
GE
= 0V, V
CE
= 600V
μA
V
GE
= 0V, V
CE
= 10V, T
J
= 25
°
C
V
GE
= 0V, V
CE
= 600V, T
J
= 150
°
C
nA
V
GE
= ±20V
V/
°
C
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
g
fe
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
Details of note
through are on the last page
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min. Typ. Max. Units
—
34
—
4.9
—
14
—
28
—
27
—
150
—
100
—
0.15
—
0.25
—
0.40
10
—
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
51
7.4
21
—
—
220
150
—
—
0.6
—
I
C
= 9.0A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25
°
C
I
C
= 9.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
See Fig. 9,10,14
mJ
μs
V
CC
= 400V, T
J
= 125
°
C
V
GE
= 15V, R
G
= 50
, V
CPK
< 500V
T
J
= 150
°
C,
I
C
= 9.0A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail"
See Fig. 11,14
T
J
= 25
°
C
,
V
GE
= 15V, R
G
= 50
I
C
= 6.0A, V
CC
= 480V
Energy losses include "tail"
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
E
ts
L
E
C
ies
C
oes
C
res
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
28
29
190
190
0.68
0.07
0.13
0.20
7.5
450
61
14
—
—
—
—
—
—
—
—
—
—
—
—
mJ
mJ
nH
pF
See Fig. 7
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
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