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參數(shù)資料
| 型號： | IRG4BC10SD-STRL |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB |
| 中文描述： | 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費(fèi)電子展|第14A一（c）|至263AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 135K |
| 代理商： | IRG4BC10SD-STRL |
Parameter
Max.
600
70
41
140
140
± 20
20
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
°C
IRG4BAC50S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PROVISIONAL
Parameter
Typ.
–––
0.50
–––
TBD
Max.
0.64
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
1
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry Super-220 (TO-273AA) package
Generation 4 IGBT offers highest efficiency
Optimized for specific application conditions
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.28V
@V
GE
= 15V, I
C
= 41A
1/19/2000
Super-220
(TO-273AA)
N-channel
PD - 93771
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4BC10SD-STRR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB |
| IRG4BC20MD-STRL | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20MD-STRR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20UD-STRL | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6.5A I(C) | TO-263AB |
| IRG4BC20UD-STRR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6.5A I(C) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC10SD-STRR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-263AB |
| IRG4BC10SPBF | 功能描述:IGBT 晶體管 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC10UD | 制造商:International Rectifier 功能描述:SEMICONDUCTOR ((NS)) |
| IRG4BC10UDPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC10UDPBF | 制造商:International Rectifier 功能描述:IGBT |
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